A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures

G. Basso, F. Crupi, B. Neri, R. Giannetti, S. Lombardo

16th IEEE Instrumentation and Measurement Technology Conference - IMTC 1999, Venecia (Italia). 24-26 mayo 1999

Palabras clave: Dielectric breakdown, Electric breakdown, Voltage, Fluctuations, Instruments, Stress, Low-frequency noise, Noise measurement, Microcomputers, Testing

DOI: 10.1109/IMTC.1999.776154

Fecha de publicación: mayo 1999.

Cita:
Basso, G., Crupi, F., Neri, B., Giannetti, R., Lombardo, S., A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures, 16th IEEE Instrumentation and Measurement Technology Conference - IMTC 1999, Venecia (Italia). 24-26 mayo 1999.

IIT-99-120A