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Información del artículo

Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics

M. Castro, F. Dominguez-Adame, A. Sánchez, T. Rodriguez

Applied Physics Letters Vol. 75, nº. 15, pp. 2205 - 2207

Resumen:

We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain-size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to a certain degree of crystallinity of the amorphous phases during deposition, or more generally, to impurities or roughness of the substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)02641-8].


Palabras Clave: recrystallization, simulation, nucleation, growth, metals


Índice de impacto JCR y cuartil WoS: 3.791 - Q2 (2020)

Referencia DOI: DOI icon 10.1063/1.124965

Publicado en papel: Octubre 1999.

Publicado on-line: Octubre 1999.



Cita:
M. Castro, F. Dominguez-Adame, A. Sánchez, T. Rodriguez. Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics. Applied Physics Letters. Vol. 75, nº. 15, pp. 2205 - 2207, Octubre 1999. [Online: Octubre 1999]


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