TY - JOUR TI - Identification of silicon nitride/InGaAs interface states JO - Applied Physics Letters A1 - Bagnoli, P.E., Ferraris, M., Giannetti, R., Gobbi, A.L., Piccirillo, A. VL - 56 IS - 17 PY - 1990-04-23 PS - 1661 EP - 1663 DO - 10.1063/1.103109 AB - Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high?frequency capacitance?voltage (C?V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 Si?. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as 3/4 Si0 surrounded by Si bonds. ER -