Ir arriba
Información del artículo

Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering

R. Gago, L. Vázquez, O. Plantevin, T.H. Metzger, J. Munoz-Garcia, R. Cuerno, M. Castro

The temporal evolution of the characteristic wavelength (lambda) and ordering range (xi) of self-organized nanodot patterns induced during Ar+ ion beam sputtering on Si(001) and Si(111) surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of lambda (up to 54-60 nm) and increase in xi (up to 400-500 nm) after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si(111) surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirmed by theoretical simulations. (c) 2006 American Institute of Physics.


Palabras clave: surfaces, erosion, dots


Applied Physics Letters. Volumen: 89 Numero: 23 Páginas: 233101.1-233101.3

Índice de impacto JCR y cuartil Scopus: JCR impact factor: 3.977 (2006); 3.521 (2018).

Referencia DOI: DOI icon 10.1063/1.2398916    

Publicado en papel: Diciembre 2006.



Cita:
R. Gago, L. Vázquez, O. Plantevin, T.H. Metzger, J. Munoz-Garcia, R. Cuerno, M. Castro. Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering. Applied Physics Letters. vol. 89, no. 23, pp. 233101.1-233101.3, Diciembre 2006.


    Líneas de investigación:

pdf Solicitar el artículo completo a los autores



Aviso legal  |  Política de cookies |  Política de Privacidad

© Universidad Pontificia Comillas, Escuela Técnica Superior de Ingeniería - ICAI, Instituto de Investigación Tecnológica

Calle de Santa Cruz de Marcenado, 26 - 28015 Madrid, España - Tel: (+34) 91 5422 800