Ir arriba
Información del artículo

Structural improvement of SiGe films by C and F implantation and solid phase crystallization

A. Rodriguez, J. Olivares, J. Sangrador, T. Rodriguez, C. Ballesteros, M. Castro, R.M. Gwilliam

The crystallization kinetics and film microstructure of poly-SiGe layers obtained by solid-phase crystallization of unimplanted, C and F-implanted amorphous SiGe films have been studied. After crystallization, the F and C implanted SiGe films show larger grain sizes, both in-plane and perpendicular to the surface of the sample, than the unimplanted SiGe films. Also, the (111) texture is strongly enhanced when compared to the unimplanted SiGe or Si films. The structure of the C implanted SiGe samples consists of a mixture of grains with well defined contour and a small number of quasi-dendritic grains. These samples also show a very low grain size dispersion. (C) 2001 Elsevier Science B.V. All rights reserved.


Palabras clave: sige, ion implantation, solid phase crystallization, thin film transistors, silicon ion-implantation, lpcvd


Thin Solid Films. Volumen: 383 Numero: 1-2 Páginas: 113-116

Publicado en papel: Febrero 2001.



Cita:
A. Rodriguez, J. Olivares, J. Sangrador, T. Rodriguez, C. Ballesteros, M. Castro, R.M. Gwilliam. Structural improvement of SiGe films by C and F implantation and solid phase crystallization. Thin Solid Films. vol. 383, no. 1-2, pp. 113-116, Febrero 2001.


    Líneas de investigación:

Aviso legal  |  Política de cookies |  Política de Privacidad

© Universidad Pontificia Comillas, Escuela Técnica Superior de Ingeniería - ICAI, Instituto de Investigación Tecnológica

Calle de Santa Cruz de Marcenado, 26 - 28015 Madrid, España - Tel: (+34) 91 5422 800