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Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering

R. Gago, L. Vázquez, O. Plantevin, T.H. Metzger, J. Munoz-Garcia, R. Cuerno, M. Castro

The temporal evolution of the characteristic wavelength (lambda) and ordering range (xi) of self-organized nanodot patterns induced during Ar+ ion beam sputtering on Si(001) and Si(111) surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of lambda (up to 54-60 nm) and increase in xi (up to 400-500 nm) after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si(111) surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirmed by theoretical simulations. (c) 2006 American Institute of Physics.


Keywords: surfaces, erosion, dots


Applied Physics Letters. Volume: 89 Issue: 23 Pages: 233101.1-233101.3

JCR Impact Factor and WoS quartile: 3.521 - Q1 (2018)

DOI reference: DOI icon 10.1063/1.2398916    

Published on paper: December 2006.



Citation:
R. Gago, L. Vázquez, O. Plantevin, T.H. Metzger, J. Munoz-Garcia, R. Cuerno, M. Castro. Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering. Applied Physics Letters. vol. 89, no. 23, pp. 233101.1-233101.3, December 2006.


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