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Lattice model for kinetics and grain-size distribution in crystallization

M. Castro, A. Sánchez, F. Dominguez-Adame

Physical Review B Vol. 61, nº. 10, pp. 6579 - 6586

Summary:

We propose a simple, versatile, and fast computational model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetic theory found in metal recrystallization and amorphous semiconductor crystallization. Our model describes in detail the kinetics of the transformation and the grain size distribution of the product material, and is in good agreement with the available experimental data. Other morphological and kinetic features amenable of experimental observation are outlined, suggesting directions for further validation of the model.


Keywords: avrami kinetics, growth, nucleation, recrystallization, silicon, films


JCR Impact Factor and WoS quartile: 3,700 - Q2 (2022)

DOI reference: DOI icon https://doi.org/10.1103/PhysRevB.61.6579

Published on paper: March 2000.

Published on-line: March 2000.



Citation:
M. Castro, A. Sánchez, F. Dominguez-Adame Lattice model for kinetics and grain-size distribution in crystallization. Physical Review B. Vol. 61, nº. 10, pp. 6579 - 6586, March 2000. [Online: March 2000]


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